to ? 92 1.emitter 2.collect or 3.base jiangsu changjiang elec tron ics technology co., ltd to -92 plastic-encapsulate transistors D965V transistor (npn) fea tures z general purpose switching and amplification. maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c = 1m a,i e =0 22 v collecto r-emitter breakdown voltage v (br)ce o i c =1ma,i b =0 15 v emitter-ba se breakdown voltage v (br )ebo i e =10 a,i c =0 6 v collecto r cut-off current i cbo v cb =20v ,i e =0 0.1 a emitter cut-off current i ebo v eb =5v ,i c =0 0.1 a h fe(1) v ce =2v , i c =0 .15ma 150 h fe(2) v ce =2v , i c =500ma 120 0 2000 dc curr ent gain h fe(3) v ce =2v , i c =2 a 150 collecto r-emitter saturation voltage v ce(sa t) i c =3a,i b =100ma 0.35 v tr ansition frequency f t v ce =6v,i c =50ma,f= 30mhz 150 mhz symbol paramete r value unit v cbo collector-bas e voltage 22 v v ceo collector-emitter v oltage 15 v v ebo emitter-base vo ltage 6 v i c collector curr ent 5 a p c collector po wer dissipation 750 mw r ja thermal resist ance from junction to ambient 166 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 c , dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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